BF997 datasheet(4/5 Pages) PHILIPS

4 / 5 page

April 1991

Philips Semiconductors

Product speciﬁcation

N-channel dual-gate MOS-FET

BF997

STATIC CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

DYNAMIC CHARACTERISTICS

Measuring conditions (common source): ID = 10 mA; VDS =15V; VG2-S =4V; Tamb =25 °C.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

IG1-SS

gate 1 cut-off current

VG1-S = ±5 V; VG2-S =VDS =0

−±50

IG2-SS

gate 2 cut-off current

VG2-S = ±5 V; VG1-S =VDS =0

−±50

V(BR)G1-SS gate 1-source breakdown voltage

IG1-SS = ±10 mA; VG2-S =VDS =0

±6

±20

V(BR)G2-SS gate 2-source breakdown voltage

IG2-SS = ±10 mA; VG1-S =VDS =0

±6

±20

V(P)G1-S

gate 1-source cut-off voltage

ID =20 µA; VDS = 15 V; VG2-S =4V

−−2.5

V(P)G2-S

gate 2-source cut-off voltage

ID =20 µA; VDS = 15 V; VG1-S =0

−−2V

IDSS

drain-source cut-off voltage

VDS =15V; VG2-S =4V; VG1-S =0

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

UNIT

transfer admittance

f = 1 kHz

Cig1-s

input capacitance at gate 1

f = 1 MHz

−

2.5

Cig2-s

input capacitance at gate 2

f = 1 MHz

−

1.2

Crs

feedback capacitance

f = 1 MHz

−

Cos

output capacitance

f = 1 MHz

−

1pF

noise ﬁgure

f = 200 MHz; GS = 2 mS; BS =BSopt

−

1dB

power gain

f = 200 MHz; GS = 2 mS; BS =BSopt;

GL = 0.5 mS; BL =BLopt

−

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