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BFE520 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BFE520 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 8 page ![]() 1996 Oct 08 5 Philips Semiconductors Product specification NPN wideband differential transistor BFE520 APPLICATION INFORMATION SPICE parameters for any single BFE520 die Note 1. These parameters have not been extracted, the default values are shown. SEQUENCE No. PARAMETER VALUE UNIT 1 IS 1.016 fA 2 BF 220.1 − 3 NF 1.000 − 4 VAF 48.06 V 5 IKF 510.0 mA 6 ISE 283.0 fA 7 NE 2.035 − 8 BR 100.7 − 9 NR 0.988 − 10 VAR 1.692 V 11 IKR 2.352 mA 12 ISC 24.48 aA 13 NC 1.022 − 14 RB 10.00 Ω 15 IRB 1.000 µA 16 RBM 10.00 Ω 17 RE 775.3 m Ω 18 RC 2.210 Ω 19(1) XTB 0.000 − 20(1) EG 1.110 eV 21(1) XTI 3.000 − 22 CJE 1.245 pF 23 VJE 600.0 mV 24 MJE 0.258 − 25 TF 8.616 ps 26 XTF 6.788 − 27 VTF 1.414 V 28 ITF 110.3 mA 29 PTF 45.01 deg 30 CJC 447.6 fF 31 VJC 189.2 mV 32 MJC 0.071 − 33 XCJC 0.130 − 34 TR 543.7 ps 35(1) CJS 0.000 F 36(1) VJS 750.0 mV 37(1) MJS 0.000 − 38 FC 0.780 − Fig.2 Package equivalent circuit SOT353B (inductance only). handbook, halfpage B1 B2 C1 C2 LB LB MBG190 LP LP T1 T2 LE E LE LP Fig.3 Package capacitance (fF) between indicated nodes. 35 E B2 C2 C1 3.5 35 2 0.4 0.8 0.6 LP Lead inductances (nH) LB LE 35 36 35 2 36 15 B1 E B2 C2 MBG191 |
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