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BFG541 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFG541 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() September 1995 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG541 FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistor, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. The transistors are mounted in a plastic SOT223 envelope. PINNING PIN DESCRIPTION 1 emitter 2 base 3 emitter 4 collector Fig.1 SOT223. page 4 123 MSB002 - 1 Top view |
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