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BFG540W/XR Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFG540W/XR Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 16 page  1997 Dec 04 2 Philips Semiconductors Product specification NPN 9 GHz wideband transistor BFG540W BFG540W/X; BFG540W/XR FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intended for applications in the RF front end, in wideband applications in the GHz range such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems. DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. MARKING PINNING TYPE NUMBER CODE BFG540W N9 BFG540W/X N7 BFG540W/XR N8 PIN DESCRIPTION BFG540W (see Fig.1) 1 collector 2 base 3 emitter 4 emitter BFG540W/X (see Fig.1) 1 collector 2 emitter 3 base 4 emitter BFG540W/XR (see Fig.2) 1 collector 2 emitter 3 base 4 emitter Fig.1 SOT343N. page Top view MSB014 12 3 4 Fig.2 SOT343R. page Top view MSB842 21 4 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 20 V VCES collector-emitter voltage RBE =0 −− 15 V IC collector current (DC) −− 120 mA Ptot total power dissipation up to Ts =85 °C −− 500 mW hFE DC current gain IC = 40 mA; VCE = 8 V 60 120 250 Cre feedback capacitance IC = 0; VCB = 8 V; f = 1 MHz − 0.5 − pF fT transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb =25 °C − 9 − GHz GUM maximum unilateral power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb =25 °C − 16 − dB IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb =25 °C10 − dB |s21|2 insertion power gain IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb =25 °C14 15 − dB F noise figure Γ s =Γopt; IC = 10 mA; VCE =8V; f=2GHz − 2.1 − dB |
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