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BFG67/X Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BFG67/X
Description  NPN 8 GHz wideband transistors
PDF  16 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BFG67/X Datasheet(HTML) 3 Page - NXP Semiconductors

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1998 Oct 02
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistors
BFG67; BFG67/X; BFG67/XR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
10
V
VEBO
emitter-base voltage
open collector
−
2.5
V
IC
collector current (DC)
−
50
mA
Ptot
total power dissipation
Ts ≤ 65 °C; see Fig.3; note 1
−
380
mW
Tstg
storage temperature range
−65
150
°C
Tj
junction temperature
−
175
°C
Fig.3 Power derating curve.
handbook, halfpage
0
50
100
200
400
300
100
0
200
MBC984 - 1
150
P
tot
(mW)
T
s
(o C)
THERMAL CHARACTERISTICS
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to soldering point
note 1
290
K/W



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