1996 Oct 08

2

Philips Semiconductors

Product specification

Dual NPN wideband transistor

BFM520

FEATURES

• Small size

• Low noise and high gain

• High gain at low current and low capacitance at low

voltage

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Oscillator and buffer amplifiers

• Balanced amplifiers

• LNA/mixers.

DESCRIPTION

Dual transistor with two silicon NPN RF dies in a surface

mount 6-pin SOT363 (S-mini) package. The transistor is

primarily intended for wideband applications in the

GHz-range in the RF front end of analog and digital cellular

phones, cordless phones, radar detectors, pagers and

satellite TV-tuners.

PINNING - SOT363A

PIN

SYMBOL

DESCRIPTION

base 1

emitter 1

collector 2

base 2

emitter 2

collector 1

Fig.1 Simplified outline and symbol.

handbook, halfpage

MAM210

1

3

64

2

Top view

c1

c2

e1

e2

b1

b2

5

Marking code: N2.

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

Any single transistor

feedback capacitance

−

0.4

−

pF

transition frequency

9

−

GHz

insertion power gain

13

14.5

−

dB

maximum unilateral power gain

−

15

−

dB

F

noise figure

f = 900 MHz;

−

1.2

1.6

dB

thermal resistance from junction

to soldering point

single loaded

−−

230

K/W

double loaded

−−

115

K/W

s

21

2