DMP1012USS

Document number: DS40492 Rev. 3 - 2

2 of 7

www.diodes.com

August 2018

© Diodes Incorporated

DMP1012USS

Maximum Ratings (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Drain-Source Voltage

VDSS

-12

V

Gate-Source Voltage

VGSS

±8

V

Continuous Drain Current (Note 6) VGS = -4.5V

Steady

State

TA = +25°C

TA = +70°C

ID

-8.5

-6.8

A

Pulsed Drain Current (10

s Pulse, Duty Cycle = 1%)

IDM

-40

A

Maximum Continuous Body Diode Forward Current (Note 6)

IS

-2

A

Pulsed Body Diode Forward Current (10

s Pulse, Duty Cycle = 1%)

ISM

-40

A

Avalanche Current (Note 7) L = 0.1mH

IAS

-21

A

Avalanche Energy (Note 7) L = 0.1mH

EAS

22

mJ

Thermal Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Value

Unit

Total Power Dissipation (Note 5)

Steady State

TA = +25°C

PD

1.3

W

Thermal Resistance, Junction to Ambient (Note 5)

Steady state

RJA

99

°C/W

Total Power Dissipation (Note 6)

Steady State

TA = +25°C

PD

1.6

W

Thermal Resistance, Junction to Ambient (Note 6)

Steady state

RJA

77

°C/W

Thermal Resistance, Junction to Case (Note 6)

RJC

13

Operating and Storage Temperature Range

TJ, TSTG

-55 to +150

°C

Electrical Characteristics (@TA = +25°C, unless otherwise specified.)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

BVDSS

-12

—

—

V

VGS = 0V, ID = -250μA

Zero Gate Voltage Drain Current

IDSS

—

—

-1

µA

VDS = -9.6V, VGS = 0V

Gate-Source Leakage

IGSS

—

—

±100

nA

VGS = ±8V, VDS = 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

VGS(TH)

-0.4

—

-1.0

V

VDS = VGS, ID = -250μA

Static Drain-Source On-Resistance

RDS(ON)

—

9

15

m



VGS = -4.5V, ID = -9A

10

20

VGS = -3.7V, ID = -7A

11

25

VGS = -3.3V, ID = -7A

13

30

VGS = -2.5V, ID = -6A

18

40

VGS = -1.8V, ID = -4A

Diode Forward Voltage

VSD

—

-0.8

-1.2

V

VGS = 0V, IS = -1A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

Ciss

—

1344

—

pF

VDS = -10V, VGS = 0V,

f = 1.0MHz

Output Capacitance

Coss

—

342

—

Reverse Transfer Capacitance

Crss

—

297

—

Gate Resistance

Rg

—

15

—

Ω

VDS = 0V, VGS = 0V, f = 1MHz

Total Gate Charge (VGS = -4.5V)

Qg

—

19.5

—

nC

VDS = -6V, ID = -10A

Total Gate Charge (VGS = -8V)

Qg

—

31

—

Gate-Source Charge

Qgs

—

2.1

—

Gate-Drain Charge

Qgd

—

7.9

—

Turn-On Delay Time

tD(ON)

—

6.0

—

ns

VDS = -6V, VGS = -4.5V,

Rg = 1Ω, ID = -8A

Turn-On Rise Time

tR

—

32

—

Turn-Off Delay Time

tD(OFF)

—

71

—

Turn-Off Fall Time

tF

—

85

—

Reverse Recovery Time

tRR

—

46

—

ns

IF = -12A, di/dt = 500A/μs

Reverse Recovery Charge

QRR

—

44

—

nC

Notes:

5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.

7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to product testing.