BFQ151 datasheet(2/8 Pages) PHILIPS

2 / 8 page

1997 Sep 19

Philips Semiconductors

Product speciﬁcation

PNP video transistor

BFQ151

FEATURES

• High gain bandwidth

• Good thermal stability

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• Pre-stage driver between video

amplifier and video module.

DESCRIPTION

PNP video transistor in a SOT54

plastic package.

PINNING

DESCRIPTION

base

collector

emitter

Fig.1 Simplified outline SOT54.

page

MSB033

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−20

collector current (DC)

−−100

Ptot

total power dissipation

Ts ≤ 60 °C

−

1.25

transition frequency

IC = −70 mA; VCE = −10 V

3.5

−

GHz

Cre

feedback capacitance

IC = 0; VCB = −10 V

1.8

−

junction temperature

−

175

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−−20

VCEO

collector-emitter voltage

open base

−−15

VEBO

emitter-base voltage

open collector

−−3V

collector current (DC)

−−100

Ptot

total power dissipation

Ts ≤ 60 °C; note 1; see Fig.2

−

1.25

Tstg

storage temperature

−65

+150

°C

junction temperature

−

175

°C

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