BFQ161 datasheet(2/8 Pages) PHILIPS

2 / 8 page

1997 Oct 02

Philips Semiconductors

Product speciﬁcation

NPN video transistor

BFQ161

FEATURES

• Low output capacitance

• High gain bandwidth

• High current applicability

• Good thermal stability

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• Pre-stage driver in high resolution

colour graphics monitors.

DESCRIPTION

NPN video transistor in a SOT54

(TO-92) plastic package.

PINNING

DESCRIPTION

base

collector

emitter

Fig.1

Simplified outline

(SOT54; TO-92).

page

MSB033

QUICK REFERENCE DATA

Note

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Ts is the temperature at the soldering point of the collector pin, 4 mm from the body.

2. Transistor mounted on a printed-circuit board with a metallized pad area of 10 mm2.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCER

collector-emitter voltage

RBE = 100 Ω−

collector current (DC)

−

500

Ptot

total power dissipation

Ts ≤ 75 °C; note 1

−

hFE

DC current gain

IC = 300 mA; VCE =5V

−

transition frequency

IC = 300 mA; VCE =5V; Tamb =25 °C1

−

GHz

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VCER

collector-emitter voltage

RBE = 100 Ω−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

500

Ptot

total power dissipation

Ts ≤ 75 °C; notes 1 and 2; see Fig.3

−

Tstg

storage temperature range

−65

+150

°C

junction temperature

−

150

°C

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