BFQ18A datasheet(2/6 Pages) PHILIPS

2 / 6 page

September 1995

Philips Semiconductors

Product speciﬁcation

NPN 4 GHz wideband transistor

BFQ18A

DESCRIPTION

NPN transistor in a plastic SOT89

envelope intended for application in

thick and thin-film circuits. It is

primarily intended for MATV

purposes.

PINNING

DESCRIPTION

Code: FF

emitter

collector

base

Fig.1 SOT89.

page

Bottom view

MBK514

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector tab.

SYMBOL

PARAMETER

CONDITIONS

TYP. MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

DC collector current

−

150

Ptot

total power dissipation

up to Ts = 155 °C (note 1)

−

transition frequency

IC = 100 mA; VCE = 10 V; f = 500 MHz;

Tj = 25 °C

−

GHz

Cre

feedback capacitance

IC = 0; VCE = 10 V; f = 10.7 MHz

1.2

−

dim

intermodulation distortion

IC = 80 mA; VCE = 10 V; RL =75 Ω;

Vo = 700 mV; measured at

f(p+q-r) = 793.25 MHz

−−60

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

DC collector current

−

150

Ptot

total power dissipation

up to Ts = 155 °C (note 1)

−

Tstg

storage temperature

−65

150

°C

junction temperature

−

175

°C

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