BFQ221 datasheet(2/5 Pages) PHILIPS

2 / 5 page

1996 Sep 04

Philips Semiconductors

Product speciﬁcation

NPN video transistor

BFQ221

APPLICATIONS

• Primarily intended for buffer stages

in high resolution colour monitors.

DESCRIPTION

NPN silicon transistor encapsulated

in a 3-lead plastic SOT54 package.

PINNING

DESCRIPTION

base

collector

emitter

Fig.1 Simplified outline SOT54.

MSB033

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

TYP

MAX

UNIT

VCBO

collector-base voltage

open emitter

−

100

collector current (DC)

−

100

Ptot

total power dissipation

up to Ts =60 °C

−

1.15

transition frequency

IC = 25 mA; VCE =10V

−

GHz

Cre

feedback capacitance

IC = 0; VCB =10V

1.7

−

junction temperature

−

150

°C

SYMBOL

PARAMETER

CONDITIONS

MIN

MAX

UNIT

VCBO

collector-base voltage

open emitter

−

100

VCER

collector-emitter voltage

RBE = 100 Ω−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

see Fig.2

−

100

IC(AV)

average collector current

see Fig.2

−

100

Ptot

total power dissipation

up to Ts =60 °C; note 1; see Fig.3

−

1.15

Tstg

storage temperature

−65

+150

°C

junction temperature

−

150

°C

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