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STP1N120 Datasheet(PDF) 1 Page - STMicroelectronics |
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STP1N120 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 10 page ![]() PRELIMINARY DATA This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. September 2006 Rev 1 1/10 10 STP1N120 N-channel 1200V - 30 Ω - 500mA - TO-220 Zener - protected SuperMESH™ Power MOSFET General features ■ 100% avalanche tested ■ Extremely high dv/dt capability ■ ESD improved capability ■ New high voltage benchmark ■ Gate charge minimized Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Internal schematic diagram Type VDSS RDS(on) ID PW STP1N120 1200V < 38 Ω 500mA 45W TO-220 1 2 3 www.st.com Order codes Part number Marking Package Packaging STP1N120 P1N120 TO-220 Tube |
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