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2SC5991 Datasheet(PDF) 2 Page - Sanyo Semicon Device |
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2SC5991 Datasheet(HTML) 2 Page - Sanyo Semicon Device |
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2 / 4 page ![]() 2SC5991 No.8071-2/4 Continued from preceding page. Ratings Parameter Symbol Conditions min typ max Unit Gain-Bandwidth Product fT VCE=10V, IC=500mA 330 MHz Output Capacitance Cob VCB=10V, f=1MHz 28 pF Collector-to-Emitter Saturation Voltage VCE(sat) IC=3.5A, IB=175mA 105 160 mV IC=2A, IB=40mA 90 135 mV Base-to-Emitter Saturation Voltage VBE(sat) IC=2A, IB=40mA 0.81 1.2 V Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 100 V Collector-to-Emitter Breakdown Voltage V(BR)CES IC=100µA, RBE=0 100 V Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 50 V Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 6 V Turn-ON Time ton See specified Test Circuit. 30 ns Storage Time tstg See specified Test Circuit. 420 ns Fall Time tf See specified Test Circuit. 25 ns Package Dimensions Switching Time Test Circuit unit : mm 2163A VR RB VCC=25V IC=20IB1= --20IB2=2.5A VBE= --5V + + 50 Ω INPUT OUTPUT RL 470 µF 100 µF PW=20 µs IB1 D.C. ≤1% IB2 IC -- VCE Collector-to-Emitter Voltage, VCE -- V IC -- VBE Base-to-Emitter Voltage, VBE -- V 7 5 6 4 2 3 1 0 7 5 6 4 2 3 1 0 0.2 0 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 IT08237 10mA 15mA 50mA 20mA 40mA 60mA 80mA 100mA IB=0 5mA VCE=2V 0 0.2 0.4 0.6 0.8 1.0 0.1 0.3 0.5 0.7 0.9 IT08238 30mA 1.5 0.5 0.4 3.0 0.75 4.5 1.6 0.4 12 3 1.5 1 : Base 2 : Collector 3 : Emitter SANYO : PCP type B |
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