1995 Sep 26

2

Philips Semiconductors

Product specification

NPN 7 GHz wideband transistor

BFQ621

FEATURES

• High power gain

• High output voltage

• High maximum junction temperature

• Gold metallization ensures excellent reliability.

APPLICATIONS

It is primarily intended for use in MATV and microwave

amplifiers, such as aerial amplifiers, radar systems,

oscilloscopes, spectrum analyzers, etc.

DESCRIPTION

Silicon NPN transistor in a 4-lead dual-emitter SOT172A2

package with a ceramic cap. All leads are isolated from the

mounting base. Emitter ballasting resistors and application

of gold sandwich metallization ensures an optimum

temperature profile and excellent reliability properties.

PINNING

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

Fig.1 SOT172A2.

handbook, halfpage

MSA457

4

2

3

1

Top view

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

collector-emitter voltage

open base

−−

16

V

collector current (DC)

−−

150

mA

total power dissipation

−−

8W

DC current gain

40

−−

transition frequency

−

7

−

GHz

maximum unilateral power gain

−

18.5

−

dB

output voltage

−

1.2

−

V

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.