1

Power MOSFET

FEATURES

• Halogen-free According to IEC 61249-2-21

Definition

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Surface Mount (IRFRC20, SiHFRC20)

• Straight Lead (IRFUC20, SiHFUC20)

• Available in Tape and Reel

•Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. VDD = 50 V, starting TJ = 25 °C, L = 37 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12).

c. ISD ≤ 2.0 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

VDS (V)

600

RDS(on) (Ω)VGS = 10 V

4.4

Qg (Max.) (nC)

18

Qgs (nC)

3.0

Qgd (nC)

8.9

Configuration

Single

ABSOLUTE MAXIMUM RATINGS

TC = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

VDS

600

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current

VGS at 10 V

TC = 25 °C

ID

2.0

A

TC = 100 °C

1.3

Pulsed Drain Currenta

IDM

8.0

Linear Derating Factor

0.33

W/°C

Linear Derating Factor (PCB Mount)e

0.020

Single Pulse Avalanche Energyb

EAS

74

mJ

Repetitive Avalanche Currenta

IAR

2.0

A

Repetitive Avalanche Energya

EAR

4.2

mJ

Maximum Power Dissipation

TC = 25 °C

PD

42

W

Maximum Power Dissipation (PCB Mount)e

TA = 25 °C

2.5

Peak Diode Recovery dV/dtc

dV/dt

3.0

V/ns

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

260d

* Pb containing terminations are not RoHS compliant, exemptions may apply

S

N-Channel MOSFET

G

D

TO-220AB

Top View

GD S

G D S

TO-220 FULLPAK

TO-252

GD

S

Top View

TO-251

G

D

S

Top View

Top View

VBM16R02 / VBMB16R02

VBE16R02 / VBFB16R02

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