BFR93A datasheet(2/12 Pages) PHILIPS

2 / 12 page

1997 Oct 29

Philips Semiconductors

Product speciﬁcation

NPN 6 GHz wideband transistor

BFR93A

FEATURES

• High power gain

• Low noise figure

• Very low intermodulation distortion.

APPLICATIONS

• RF wideband amplifiers and

oscillators.

DESCRIPTION

NPN wideband transistor in a plastic

SOT23 package.

PNP complement: BFT93.

PINNING

DESCRIPTION

base

emitter

collector

Fig.1 SOT23.

page

MSB003

Top view

Marking code: R2p.

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Ts is the temperature at the soldering point of the collector pin.

SYMBOL

PARAMETER

CONDITIONS

TYP.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

collector current (DC)

−

Ptot

total power dissipation

Ts ≤ 95 °C

−

300

Cre

feedback capacitance

IC = 0; VCE = 5 V; f = 1 MHz

0.6

−

transition frequency

IC = 30 mA; VCE = 5 V; f = 500 MHz

−

GHz

GUM

maximum unilateral power gain IC = 30 mA; VCE = 8 V; f = 1 GHz; Tamb =25 °C13

−

IC = 30 mA; VCE = 8 V; f = 2 GHz; Tamb =25 °C7

−

noise ﬁgure

IC = 5 mA; VCE = 8 V; f = 1 GHz; Γs = Γopt;

Tamb =25 °C

1.9

−

output voltage

dim = −60 dB; IC = 30 mA; VCE =8V;

RL =75 Ω; Tamb =25 °C;

fp +fq − fr = 793.25 MHz

425

−

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

Ptot

total power dissipation

Ts ≤ 95 °C; note 1

−

300

Tstg

storage temperature

−65

+150

°C

junction temperature

−

+175

°C

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