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BAV102_BAV103

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Product data sheet

Rev. 4 — 6 August 2010

3 of 11

Nexperia

BAV102; BAV103

Single general-purpose switching diodes

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

[2]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[3]

Tj =25 °C prior to surge.

6.

Thermal characteristics

[1]

Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

7.

Characteristics

[1]

Pulse test: tp ≤ 300 μs; δ≤ 0.02.

[2]

When switched from IF = 30 mA to IR =30mA; RL = 100 Ω; measured at IR =3mA.

Ptot

total power dissipation

Tamb ≤ 25 °C

[2] -400

mW

Tj

junction temperature

-

175

°C

Tamb

ambient temperature

−65

+175

°C

Tstg

storage temperature

−65

+175

°C

Table 6.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

Table 7.

Thermal characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Rth(j-a)

thermal resistance from

junction to ambient

in free air

[1] -

-

375

K/W

Rth(j-t)

thermal resistance from

junction to tie-point

-

-

300

K/W

Table 8.

Characteristics

Tamb =25 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VF

forward voltage

[1]

IF = 100 mA

--1.0

V

IF = 200 mA

--1.25

V

IR

reverse current

BAV102

VR = 150 V

-

-

100

nA

VR =150 V; Tj = 150 °C

-

-

100

μA

BAV103

VR = 200 V

-

-

100

nA

VR =200 V; Tj = 150 °C

-

-

100

μA

Cd

diode capacitance

f = 1 MHz; VR = 0 V

--5

pF

trr

reverse recovery time

[2] --50

ns