1999 May 25

4

NXP Semiconductors

Product data sheet

General purpose diodes

BAV20; BAV21

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

1.

Device mounted on a printed circuit-board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VF

forward voltage

see Fig.3

IF = 100 mA

−

1.0

V

IF = 200 mA

−

1.25

V

IR

reverse current

see Fig.5

VR = VRmax

−

100

nA

VR = VRmax; Tj = 150 °C

−

100

μA

Cd

diode capacitance

f = 1 MHz; VR = 0; see Fig.6

−

5

pF

trr

reverse recovery time

when switched from IF = 30 mA to

IR = 30 mA; RL = 100 Ω; measured

at IR = 3 mA; see Fig.8

−

50

ns

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-tp

thermal resistance from junction to tie-point

lead length 10 mm

240

K/W

Rth j-a

thermal resistance from junction to ambient

lead length 10 mm; note 1

375

K/W