IXYS reserves the right to change limits, test conditions, and dimensions.

IXTA 05N100

IXTP 05N100

Symbol

Test Conditions

Characteristic Values

(T

min.

typ.

max.

g

fs

V

DS

= 20 V; I

0.5

0.85

S

C

iss

240

pF

C

oss

V

GS

= 0 V, V

22

pF

C

rss

4pF

t

d(on)

11

ns

t

r

V

GS

= 10 V, V

19

ns

t

d(off)

R

G

= 47

Ω, (External)

40

ns

t

f

28

ns

Q

g(on)

10.5

nC

Q

gs

V

GS

= 10 V, V

2.5

nC

Q

gd

5.0

nC

R

thJC

3.1

K/W

R

thCK

(IXTP)

0.50

K/W

Source-Drain Diode

Characteristic Values

(T

Symbol

Test Conditions

min.

typ.

max.

I

S

V

750 mA

I

SM

Repetitive; pulse width limited by T

JM

3A

V

SD

I

2

V

Pulse test, t

≤ 300 µs, duty cycle d ≤ 2 %

t

rr

I

710

ns

Pins: 1 - Gate

2 - Drain

3 - Source

4 - Drain

Bottom Side

TO-220 AB Dimensions

TO-263 AA Outline

1. Gate

2. Drain

3. Source

4. Drain

BottomSide

Dim.

Millimeter

Inches

Min.

Max.

Min.

Max.

A

4.06

4.83

.160

.190

A1

2.03

2.79

.080

.110

b

0.51

0.99

.020

.039

b2

1.14

1.40

.045

.055

c

0.46

0.74

.018

.029

c2

1.14

1.40

.045

.055

D

8.64

9.65

.340

.380

D1

7.11

8.13

.280

.320

E

9.65

10.29

.380

.405

E1

6.86

8.13

.270

.320

e

2.54

BSC

.100

BSC

L

14.61

15.88

.575

.625

L1

2.29

2.79

.090

.110

L2

1.02

1.40

.040

.055

L3

1.27

1.78

.050

.070

L4

0

0.38

0

.015

R

0.46

0.74

.018

.029

IXYS MOSFETs and IGBTs are covered by

4,835,592

4,931,844

5,049,961

5,237,481

6,162,665

6,404,065B1

6,683,344

6,727,585

one or moreof the following U.S. patents:

4,850,072

5,017,508

5,063,307

5,381,025

6,259,123B1

6,534,343

6,710,405B2

6,759,692

4,881,106

5,034,796

5,187,117

5,486,715

6,306,728 B1

6,583,505

6,710,463