BFX34 datasheet(3/8 Pages) PHILIPS

3 / 8 page

1997 Apr 22

Philips Semiconductors

Product speciﬁcation

NPN switching transistor

BFX34

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

VCBO

collector-base voltage

open emitter

−

120

VCEO

collector-emitter voltage

open base

−

VEBO

emitter-base voltage

open collector

−

collector current (DC)

−

ICM

peak collector current

−

IBM

peak base current

−

1.5

Ptot

total power dissipation

Tcase ≤ 25 °C

−

Tamb ≤ 25 °C

−

0.87

Tstg

storage temperature

−65

+150

°C

junction temperature

−

200

°C

Tamb

operating ambient temperature

−65

+150

°C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient in free air

200

K/W

Rth j-c

thermal resistance from junction to case

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

ICBO

collector cut-off current

IE = 0; VCB =60V

−−

µA

IEBO

emitter cut-off current

IC = 0; VEB =4V

−−

µA

hFE

DC current gain

IC = 1 A; VCE =2V

−

130

−

IC = 1.5 A; VCE = 0.6 V

−

IC = 2 A; VCE = 2 V

110

150

VCEsat

collector-emitter saturation voltage

IC = 5 A; IB = 0.5 A

−

0.77

VBEsat

base-emitter saturation voltage

IC = 5 A; IB = 0.5 A

−

1.43

1.8

collector capacitance

IE =ie = 0; VCB =10V;

f = 1 MHz

−

emitter capacitance

IC =ic = 0; VEB = 0.5 V;

f = 1 MHz

−

440

−

transition frequency

IC = 0.5 A; VCE =5V;

f = 100 MHz

100

−

MHz

Switching times (between 10% and 90% levels)

ton

turn-on time

ICon = 5 A; IBon = 0.5 A;

IBoff = − 0.5 A

−

0.2

0.6

µs

toff

turn-off time

−

0.34

1.2

µs

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