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BFX85 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BFX85 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 8 page ![]() 1997 Apr 22 2 Philips Semiconductors Product specification NPN switching transistor BFX85 FEATURES • High current (max. 1 A) • Low voltage (max. 60 V). APPLICATIONS • General purpose switching and amplification • Industrial applications. DESCRIPTION NPN transistor in a TO-39 metal package. PINNING PIN DESCRIPTION 1 emitter 2 base 3 collector, connected to case Fig.1 Simplified outline (TO-39) and symbol. handbook, halfpage 3 1 2 MAM317 1 2 3 QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter −− 100 V VCEO collector-emitter voltage open base −− 60 V IC collector current (DC) −− 1A Ptot total power dissipation Tamb ≤ 25 °C −− 800 mW Tcase ≤ 100 °C −− 2.86 W hFE DC current gain IC = 150 mA; VCE = 10 V 70 142 − fT transition frequency IC = 50 mA; VCE = 10 V; f = 100 MHz 50 −− MHz toff turn-off time ICon = 150 mA; IBon = 15 mA; IBoff = −15 mA − 360 − ns |
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