BGA2001 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1999 Aug 11

Philips Semiconductors

Product speciﬁcation

Silicon MMIC ampliﬁer

BGA2001

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

RF input AC coupled; Tj =25 °C; unless otherwise speciﬁed.

Note

1. See application note: RNR-T45-99-B-0513.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

supply voltage

RF input AC coupled

−

4.5

supply current (DC)

forced by DC voltage on RF input

−

Ptot

total power dissipation

Ts ≤ 100 °C

−

135

Tstg

storage temperature

−65

+150

°C

operating junction temperature

−

150

°C

SYMBOL

PARAMETER

VALUE

UNIT

Rth j-s

thermal resistance from junction to soldering point

350

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

supply current

VVS-OUT =1V

−

0.7

−

VVS-OUT = 2.5 V

4.5

VVS-OUT = 4.5 V

−

MSG

maximum stable gain

VVS-OUT = 2.5 V;

IVS-OUT = 4 mA; f = 900 MHz

−

VVS-OUT = 2.5 V;

IVS-OUT = 4 mA; f = 1.8 GHz

−

19.5

−

21|

insertion power gain

VVS-OUT = 2.5 V;

IVS-OUT = 4 mA; f = 900 MHz

−

VVS-OUT = 2.5 V;

IVS-OUT = 4 mA; f = 1.8 GHz

−

load power

at 1 dB gain compression point;

VVS-OUT = 2.5 V;

IVS-OUT = 4.4 mA; f = 900 MHz;

−−2

−

dBm

noise ﬁgure

VVS-OUT = 2.5 V;

IVS-OUT = 4 mA; f = 900 MHz;

ΓS = Γopt

−

1.3

−

VVS-OUT = 2.5 V;

IVS-OUT = 4 mA; f = 1.8 GHz;

ΓS = Γopt

−

1.3

−

IP3(in)

input intercept point; note 1

VVS-OUT = 2.5 V;

IVS-OUT = 4.4 mA; f = 900 MHz

−−7.4

−

dBm

VVS-OUT = 2.5 V;

IVS-OUT = 4.5 mA;

f = 1800 MHz

−−4.5

−

dBm

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