Specifications and information are subject to change without notice

WJ Communications, Inc

Phone 1-800-WJ1-4401 FAX: 408-577-6621

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Web site: www.wj.com

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April 2006

ECP050D

½ Watt, High Linearity InGaP HBT Amplifier

Product Information

Product Features

RoHS-compliant QFN Package

Applications

Product Description

The ECP050D is a high dynamic range driver amplifier

in a low-cost surface mount package. The InGaP/GaAs

HBT is able to achieve high performance for various

narrowband-tuned application circuits with up to +44

dBm OIP3 and +28.5 dBm of compressed 1dB power. It

is housed in an industry standard in a lead-free/

green/RoHS-compliant 16-pin 4x4mm QFN surface-

mount package. All devices are 100% RF and DC tested.

The ECP050D is targeted for use as a driver amplifier in

wireless infrastructure where high linearity and medium

power is required. An internal active bias allows the

ECP050D to maintain high linearity over temperature and

operate directly off a single +5V supply.

This

combination makes the device an excellent candidate for

transceiver line cards in current and next generation

multi-carrier 3G base stations.

Functional Diagram

Function

Pin No.

Vref

1

RF Input

3

RF Output

10, 11

Vbias

16

GND

Backside Paddle

N/C or GND

2, 4-9, 12-15

Parameters

Units Min

Typ

Max

Operational Bandwidth

MHz

1800

2300

Test Frequency

MHz

2140

Gain

dB

12.5

14.4

Input Return Loss

dB

23

Output Return Loss

dB

8

Output P1dB

dBm

+26.5

+28.5

dBm

+41

+42

IS-95A Channel Power

@ -45 dBc ACPR, 1960 MHz

dBm

+22.5

wCDMA Channel Power

@ -45 dBc ACLR, 2140 MHz

dBm

+20

Noise Figure

dB

5.3

mA

200

250

300

Device Voltage

V

+5

1. Test conditions unless otherwise noted. 25 ºC, Vsupply = +5 V in tuned application circuit.

2. 3OIP measured with two tones at an output power of +11 dBm/tone separated by 1 MHz. The

suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.

3. This corresponds to the quiescent current or operating current under small-signal conditions. It is

expected that the current can increase up to 300mA at P1dB.

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

qC

Storage Temperature

-65 to +150

qC

RF Input Power (continuous)

+22 dBm

Device Voltage

+8 V

Device Current

400 mA

Device Power

2 W

Junction Temperature

+250

qC

Operation of this device above any of these parameters may cause permanent damage.

Parameters

Units

Typical

Frequency

MHz

1960

2140

Gain

dB

14.3

14.4

S11

dB

-12

-23

S22

dB

-8

-8

Output P1dB

dBm

+28.3

+28.5

dBm

+44

+42

IS-95A Channel Power

@ -45 dBc ACPR,

dBm

+22.5

wCDMA Channel Power

@ -45 dBc ACLR

dBm

+20

Noise Figure

dB

5

5.3

Supply Bias

+5 V @ 250 mA

4. Typical parameters reflect performance in a tuned application circuit at +25 C.

Ordering Information

Part No.

Description

ECP050D-G

½ Watt, High Linearity InGaP HBT Amplifier

(lead-free/green/RoHS-compliant 16-pin 4x4mm QFN package)

ECP050D-PCB1960

1960 MHz Evaluation Board

ECP050D-PCB2140

2140 MHz Evaluation Board

1

2

3

4

12

11

10

9

16

15

14

13

5

6

7

8

N/C

RF OUT

RF OUT

N/C

Vref

N/C

RF IN

N/C