Continental Device India Limited

An IS/ISO 9002 and IECQ Certified Manufacturer

PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTOR

CC5401

(9AW)

TO-92

BCE

MARKING : CC

5401

High Voltage PNP Transistor For General Purpose And Telephony Applications.

ABSOLUTE MAXIMUM RATINGS.

DESCRIPTION

SYMBOL

VALUE

UNIT

Collector -Emitter Voltage

VCEO

150

V

Collector -Base Voltage

VCBO

160

V

Emitter -Base Voltage

VEBO

5.0

V

Collector Current Continuous

IC

600

mA

Power Dissipation @Ta=25 degC

PD

625

mW

Derate Above 25 deg C

5.0

mw/deg C

Power Dissipation @Tc=25 degC

PD

1.5

W

Derate Above 25 deg C

12

mw/deg C

Junction Temperature

Tj

150

deg C

Storage Temperature

Tstg

-55 to +150

deg C

THERMAL RESISTANCE

Junction to Case

Rth(j-c)

83.3

deg C/W

Junction to Ambient

Rth(j-a)

200

deg C/W

ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)

DESCRIPTION

SYMBOL

TEST CONDITION

MIN

TYP

MAX

UNIT

Collector -Emitter Voltage

VCEO*

IC=1uA,IB=0

150

-

-

V

Collector -Base Voltage

VCBO

IC=100uA.IE=0

160

-

-

V

Emitter -Base Voltage

VEBO

IE=10uA, IC=-0

5.0

-

-

V

Collector-Cut off Current

ICBO

VCB=160V, IE=0

-

-

50

nA

Ta=100 deg C

VCB=160V, IE=0

-

-

50

uA

ICEO

VCE=150V, IB=0

1.0

uA

Emitter-Cut off Current

IEBO

VEB=4V, IC=0

-

-

50

nA

DC Current Gain

hFE*

IC=1mA,VCE=5V

50

-

-

IC=10mA,VCE=5V

80

-

320

IC=50mA,VCE=5V

50

-

-

IS/ISO 9002

Lic# QSC/L- 000019.2

IS / IECQC 700000

IS / IECQC 750100

Continental Device India Limited

Data Sheet

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