Specifications and information are subject to change without notice

WJ Communications, Inc

• Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • Web site: www.wj.com

Page 1 of 5 February 2006

AP503

DCS-band 4W HBT Amplifier Module

Product Information

The Communications Edge

TM

Product Features

(-64 dBc ACPR)

Applications

mobile infrastructure

Product Description

The AP503 is a high dynamic range power amplifier in a

RoHS-compliant flange-mount package. The multi-stage

amplifier module has 31.5 dB gain. The module has been

internally optimized for linearity to provide +25 dBm (-64

dBc ACPR) linear power for 7-carrier CDMA2000

applications.

The AP503 uses a high reliability InGaP/GaAs HBT

process technology and does not require any external

matching components. The module operates off of a +12V

supply and does not requiring any negative biasing voltages;

an internal active bias allows the amplifier to maintain high

linearity over temperature. It has the added feature of a

+5V power down control pin. While the module has been

tuned for optimal performance for Class AB applications,

the quiescent current can also be adjusted for Class B

applications through an external resistor. A low-cost metal

housing allows the device to have a low thermal resistance

and achieves over 100 years MTTF. All devices are 100%

RF and DC tested.

The AP503 is targeted for use as a driver or final stage

amplifier in wireless infrastructure where high linearity and

high power is required. This combination makes the device

an excellent candidate for next generation multi-carrier 3G

base stations using the DCS1800 frequency band.

Functional Diagram

Top View

Pin No.

Function

1

RF Output

2 / 4

Vcc

3 / 5

Vpd

6

RF Input

Case

Ground

Parameter

Units

Min

Typ

Max Test Conditions

Operational Bandwidth

MHz

1805 – 1880

Test Frequency

MHz

1845

Adjacent Channel Power Ratio

dBc

-63.8

-61

CDMA2000 7fa 25 dBm Total Power, 885 kHz offset

Power Gain

dB

29.5

32.2

34.5

Pout = +25 dBm

Input Return Loss

dB

11

Output Return Loss

dB

6

Output P1dB

dBm

+36

Output IP3

dBm

+50

Pout = +23 dBm/tone, Δf = 1 MHz

mA

790

850

940

Pout = +25 dBm

mA

780

835

920

Device Voltage, Vcc

V

+12

Device Voltage, Vpd

V

+5

Pull-down voltage: 0V = “OFF”, 5V=”ON”

Load Stability

VSWR

10:1

1. Test conditions unless otherwise noted: 25ºC.

2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3).

Absolute Maximum Rating

Parameter

Rating

Operating Case Temperature

-40 to +85

°C

Storage Temperature

-55 to +150

°C

RF Input Power (continuous)

with output terminated in 50 Ω

+15 dBm

Operation of this device above any of these parameters may cause permanent damage.

Ordering Information

Part No.

Description

AP503

DCS-band 4W HBT Amplifier Module

AP503-PCB

Fully-Assembled Evaluation Board

(Class AB configuration, Icq=835mA)

1 2 3

4 5 6