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BGY241 Datasheet(PDF) 2 Page - NXP Semiconductors |
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BGY241 Datasheet(HTML) 2 Page - NXP Semiconductors |
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2 / 12 page ![]() 1999 Sep 09 2 Philips Semiconductors Product specification UHF amplifier module BGY241 FEATURES • 3.5 V nominal supply voltage • 35 dBm output power • Easy output power control by DC voltage. APPLICATIONS • Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in the 880 to 915 MHz frequency range. DESCRIPTION The BGY241 is a three-stage UHF amplifier module in a SOT482C leadless package with a plastic cover. The module consists of one NPN silicon planar transistor die and one bipolar monolithic integrated circuit mounted together with matching and bias circuit components on a metallized ceramic substrate. PINNING - SOT482C PIN DESCRIPTION 1 RF input 2VC 3VS 4 RF output 5 ground handbook, halfpage MBK201 Bottom view 43 2 5 1 Fig.1 Simplified outline. QUICK REFERENCE DATA RF performance at Tmb =25 °C. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). MODE OF OPERATION f (MHz) VS (V) VC (V) PL (dBm) Gp (dB) η (%) ZS;ZL ( Ω) Pulsed; δ = 1 : 8 880 to 915 3.5 ≤2.2 35.2 ≥35.2 typ. 43 50 SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VS DC supply voltage VC = 0; PD =0mW − 7V VC ≥ 0.2 V − 5.5 V VC DC control voltage − 2.7 V PD input drive power − 10 dBm PL load power − 36 dBm Tstg storage temperature −40 +100 °C Tmb operating mounting base temperature −30 +100 °C CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B. |
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