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TLE6252G Datasheet(PDF) 21 Page - Siemens Semiconductor Group |
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TLE6252G Datasheet(HTML) 21 Page - Siemens Semiconductor Group |
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21 / 25 page ![]() TLE 6252 G Semiconductor Group 21 1998-11-01 Propagation delay TxD-to-RxD LOW (recessive to dominant) t PD(L) –0.8 1.5 µs C 1 = 100 pF; C 2 = 0; R1 = 100 Ω; no failures and bus failure cases 1, 2, 3a and 4 –0.8 1.5 µs C 1 = C2 = 3.3 nF; R 1 = 100 Ω; no bus failure and failure cases 1, 2, 3a and 4 –1.2 1.8 µs C 1 100 pF; C2 = 0; R 1 = 100 Ω; bus failure cases 3, 5, 6, 6a and 7 –1.2 1.8 µs C 1 = C2 = 3.3 nF; R 1 =100 Ω; bus failure cases 3, 5, 6, 6a and 7 Dynamic Characteristics (cont’d) V CC = 4.75 V to 5.25 V; VNSTB = V CC; VBAT = 6 V to 27 V; TA = – 40 to + 125 oC (unless otherwise specified). All voltages are defined with respect to ground. Positive current flows into the IC. Parameter Symbol Limit Values Unit Notes min. typ. max. |
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