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BGY65 Datasheet(PDF) 3 Page - NXP Semiconductors |
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BGY65 Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1997 Apr 09 3 Philips Semiconductors Product specification CATV amplifier module BGY65 CHARACTERISTICS Table 1 Bandwidth 5 to 200 MHz; Tmb =30 °C; ZS =ZL =75 Ω Notes 1. fp = 83.25 MHz; Vp = 50 dBmV; fq = 109.25 MHz; Vq = 50 dBmV; measured at fp +fq = 192.5 MHz. 2. Measured according to DIN45004B: fp = 35.25 MHz; Vo =Vp; fq = 42.25 MHz; Vq =Vo −6 dB; fr = 44.25 MHz; Vr =Vo −6 dB; measured at fp +fq − fr = 33.25 MHz. 3. Measured according to DIN45004B: fp = 187.25 MHz; Vo =Vp; fq = 194.25 MHz; Vq =Vo −6 dB; fr = 196.25 MHz; Vr =Vo −6 dB; measured at fp +fq − fr = 185.25 MHz. 4. The module normally operates at VB = +24 V, but is able to withstand supply transients up to +30 V. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Gp power gain f = 10 MHz 18 − 19 dB SL slope cable equivalent f = 5 to 200 MHz −0.2 − +0.5 dB FL flatness of frequency response f = 5 to 200 MHz −−±0.2 dB S11 input return losses f = 5 to 200 MHz 20 −− dB S22 output return losses f = 5 to 200 MHz 20 −− dB CTB composite triple beat 22 channels flat; Vo = 50 dBmV; measured at 175.25 MHz −−−68 dB Xmod cross modulation 22 channels flat; Vo = 50 dBmV; measured at 55.25 MHz −−−61 dB d2 second order distortion Vo = 50 dBmV; note 1 −−−72 dB Vo output voltage dim = −60 dB; note 2 67 −− dBmV dim = −60 dB; note 3 64 −− dBmV F noise figure f = 200 MHz −− 5.5 dB Itot total current consumption DC value; VB = +24 V; note 4 − 215 230 mA |
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