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BGY65 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BGY65
Description  CATV amplifier module
PDF  8 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BGY65 Datasheet(HTML) 3 Page - NXP Semiconductors

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1997 Apr 09
3
Philips Semiconductors
Product specification
CATV amplifier module
BGY65
CHARACTERISTICS
Table 1
Bandwidth 5 to 200 MHz; Tmb =30 °C; ZS =ZL =75 Ω
Notes
1. fp = 83.25 MHz; Vp = 50 dBmV;
fq = 109.25 MHz; Vq = 50 dBmV;
measured at fp +fq = 192.5 MHz.
2. Measured according to DIN45004B:
fp = 35.25 MHz; Vo =Vp;
fq = 42.25 MHz; Vq =Vo −6 dB;
fr = 44.25 MHz; Vr =Vo −6 dB;
measured at fp +fq − fr = 33.25 MHz.
3. Measured according to DIN45004B:
fp = 187.25 MHz; Vo =Vp;
fq = 194.25 MHz; Vq =Vo −6 dB;
fr = 196.25 MHz; Vr =Vo −6 dB;
measured at fp +fq − fr = 185.25 MHz.
4. The module normally operates at VB = +24 V, but is able to withstand supply transients up to +30 V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Gp
power gain
f = 10 MHz
18
−
19
dB
SL
slope cable equivalent
f = 5 to 200 MHz
−0.2
−
+0.5
dB
FL
flatness of frequency
response
f = 5 to 200 MHz
−−±0.2
dB
S11
input return losses
f = 5 to 200 MHz
20
−−
dB
S22
output return losses
f = 5 to 200 MHz
20
−−
dB
CTB
composite triple beat
22 channels flat;
Vo = 50 dBmV;
measured at 175.25 MHz
−−−68
dB
Xmod
cross modulation
22 channels flat;
Vo = 50 dBmV;
measured at 55.25 MHz
−−−61
dB
d2
second order distortion
Vo = 50 dBmV; note 1
−−−72
dB
Vo
output voltage
dim = −60 dB; note 2
67
−−
dBmV
dim = −60 dB; note 3
64
−−
dBmV
F
noise figure
f = 200 MHz
−−
5.5
dB
Itot
total current consumption
DC value; VB = +24 V; note 4 −
215
230
mA



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