AM29LV320MH101REF datasheet(58/59 Pages) SPANSION

58 / 59 page

Am29LV320MH/L

December 14, 2005

DA TA SH EET

REVISION SUMMARY

Revision A (May 30, 2002)

Initial release as Advance Information data sheet.

Revision A+1 (September 3, 2002)

Mirrorbit 32 Mbit Device Family

Changed the 48-pin TSOP to 40-pin TSOP.

Alternate CE# Controlled Erase and Program

Operations

Added t

RH parameter to table.

Erase and Program Operations

Added tBUSY parameter to table.

Figure 16. Program Operation Timings

Added RY/BY# to waveform.

TSOP and BGA PIN Capacitance

Added the FBGA package.

Program Suspend/Program Resume Command

Sequence

Changed 15

μs typical to maximum and added 5 μs

typical.

Erase Suspend/Erase Resume Commands

Changed typical from 20

μs to 5 μs and added a maxi-

mum of 20

μs.

Product Selector Guide

Added Note 2.

Ordering Information

Added 101R, 112R, and 120R to Valid Combinations

Table.

Added Note 1.

Read-Only Operations

Alternate CE# Controlled Erase and Program

Operations

Erase and Program Operations

Added 101R, 112R, and 120R to Speed Options.

Revision A+2 (November 15, 2002)

Customer Lockable: SecSi Sector NOT

Programmed or Protected At the Factory

Added second bullet and figure

Product Selector Guide and Read-Only Operations

Added 30 ns to the 112R and 120R to Max page ac-

cess time and Max OE# Access time.

Changed the Chip Enable to Output High Z and Out-

put Enable to Output High Z to 16 ns.

Byte/Word Program Command Sequence, Sector

Erase Command Sequence, and Chip Erase Com-

mand Sequence

Noted that the SecSi Sector, autoselect, and CFI

functions are unavailable when a program or erase

operation is in progress.

Common Flash Memory Interface (CFI)

Changed CFI website address.

CMOS Compatable

Added ILR parameter symbol to table.

Removed VIL, VIH, VOL, and VOH and replaced with VIL,

VIH, VOL, VOH1 and VOH2.

Clarified note #5.

Removed note #6.

Read-Only Operations

Added note #3.

Absolute Maximum Rating

Changed the Ambient Temperature with Power Ap-

plied from –55

°C to +125°C to –65°C to +125°C.

Revision A+3 (February 14, 2003)

Distinctive Characteristics

Corrected performance characteristics.

AC Characteristics

Added Note

Input values in the t

WHWH1 and tWHWH2 parameters in

the Erase and Program Options table that were previ-

ously TBD. Also added notes 5 and 6.

Input values in the t

WHWH1 and tWHWH2 parameters in

the Alternate CE# Controlled Erase and Program Op-

tions table that were previously TBD. Also added notes

5 and 6.

Erase and Programming Performance

Input values into table that were previously TBD.

Added note 3 and 4.

Revision B (May 7, 2003)

Distinctive Characteristics

Added typical active read current

Global

Converted to full datasheet version.

Modified SecSi Sector Flash Memory Region section

to include ESN references.

AM29LV320MH101REF Datasheet(PDF) 58 Page - SPANSION

AM29LV320MH101REF Datasheet(HTML) 58 Page - SPANSION

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54 55 56 57 58 59

Datasheet Download

Link URL