Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain current

-

4.4

A

ISDM(1)

Source-drain current (pulsed)

-

17.6

A

VSD

Forward on voltage

VGS = 0 V, ISD = 4.4 A

-

1.6

V

trr

Reverse recovery time

ISD = 4.4 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

-

55

ns

Qrr

Reverse recovery charge

-

95

nC

IRRM

Reverse recovery current

-

3.5

A

trr

Reverse recovery time

ISD = 4.4 A, di/dt = 100 A/µs,

VDD = 60 V, Tj = 150 °C

(see Figure 15. Test circuit for

inductive load switching and diode

recovery times)

-

120

ns

Qrr

Reverse recovery charge

-

266

nC

IRRM

Reverse recovery current

-

4.5

A

1. Pulse width is limited by safe operating area

2. Pulse test: pulse duration = 300 µs, duty cycle 1.5%

Table 8. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source breakdown voltage

IGS = ± 1mA, ID = 0 V

30

-

-

V

The built-in back-to-back Zener diodes have specifically been designed to enhance the device's ESD capability. In

this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the

device's integrity. These integrated Zener diodes thus avoid the usage of external components.

STF5N52U

Electrical characteristics

DS12943 - Rev 1

page 4/13

Obsolete

Product(s)

- Obsolete

Product(s)