STTH200L04TV1 datasheet(2/7 Pages) STMICROELECTRONICS

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Characteristics

STTH200L04TV1

2/7

Characteristics

When diodes 1 and 2 are used simultaneously:

∆ Tj(diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c)

To evaluate the conduction losses use the following equation:

P = 0.8 x I

F(AV) + 0.0033 IF

(RMS)

Table 2.

Thermal resistance

Symbol

Parameter

Value (max).

Unit

Rth(j-c)

Junction to case

Per diode

0.50

°C/W

Total

0.30

Rth(c)

Coupling

0.10

Table 3.

Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Pulse test: tp = 5 ms, δ < 2%

Reverse leakage

current

Tj = 25° C

VR = VRRM

100

µA

Tj = 125° C

100

1000

(2)

Pulse test: tp = 380 µs, δ < 2%

Forward voltage drop

Tj = 25° C

IF = 100 A

1.2

Tj = 150° C

0.83

1.0

Table 4.

Dynamic characteristics (per diode)

Symbol

Parameter

Test conditions

Min Typ Max

Unit

trr

Reverse recovery

time

Tj = 25° C

IF = 1 A dIF/dt = 50 A/µs

VR = 30 V

100

IF = 1 A dIF/dt = 200 A/µs

VR = 30 V

IRM

Reverse recovery

current

Tj = 125° C

IF = 100 A

VR = 200 V

dIF/dt = 100 A/µs

Sfactor

Softness factor

Tj = 125° C

IF = 100 A

VR = 200 V

dIF/dt = 100 A/µs

0.4

tfr

Forward recovery

time

Tj = 25° C

IF = 100 A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

800

VFP

Forward recovery

voltage

Tj = 25° C

IF = 100 A

dIF/dt = 200 A/µs

VFR = 1.1 x VFmax

2.6

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