Electronic Components Datasheet Search
  English  ▼

X  

BLF1046 Datasheet(PDF) 3 Page - NXP Semiconductors

Part # BLF1046
Description  UHF power LDMOS transistor
PDF  8 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BLF1046 Datasheet(HTML) 3 Page - NXP Semiconductors

  BLF1046 Datasheet HTML 1Page - NXP Semiconductors BLF1046 Datasheet HTML 2Page - NXP Semiconductors BLF1046 Datasheet HTML 3Page - NXP Semiconductors BLF1046 Datasheet HTML 4Page - NXP Semiconductors BLF1046 Datasheet HTML 5Page - NXP Semiconductors BLF1046 Datasheet HTML 6Page - NXP Semiconductors BLF1046 Datasheet HTML 7Page - NXP Semiconductors BLF1046 Datasheet HTML 8Page - NXP Semiconductors  
Zoom Inzoom in Zoom Outzoom out
 3 / 8 page
background image
2000 Feb 02
3
Philips Semiconductors
Preliminary specification
UHF power LDMOS transistor
BLF1046
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
Tj =25 °C unless otherwise specified.
APPLICATION INFORMATION
RF performance in a common source class-AB circuit. Th =25 °C; Rth mb-h = 0.6 K/W, unless otherwise specified.
Ruggedness in class-AB operation
The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: VDS = 26 V; f = 960 MHz at rated load power.
SYMBOL
PARAMETER
MIN.
MAX.
UNIT
VDS
drain-source voltage
−
65
V
VGS
gate-source voltage
−±20
V
ID
drain current (DC)
−
4.5
A
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
200
°C
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-h
thermal resistance from junction to heatsink
Th =25 °C, Pdis =97W;
note 1
1.2
K/W
Rth mb-h
thermal resistance from mounting base to heatsink
0.6
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V(BR)DSS
drain-source breakdown voltage
VGS = 0; ID = 0.7 mA
65
−−
V
VGSth
gate-source threshold voltage
VDS = 10 V; ID =70mA
4
−
5V
IDSS
drain-source leakage current
VGS = 0; VDS =26V
−−
1
µA
IDSX
drain cut-off current
VGS =VGSth +9V; VDS = 10 V
12.5
−−
A
IGSS
gate leakage current
VGS = ±20 V; VDS =0
−−
125
nA
gfs
forward transconductance
VDS = 10 V; ID = 3.5 A
−
2
−
S
RDSon
drain-source on-state resistance
VGS =VGSth +9V; ID = 3.5 A
−
300
−
m
Ω
Cis
input capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
46
−
pF
Cos
output capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
37
−
pF
Crs
feedback capacitance
VGS = 0; VDS = 26 V; f = 1 MHz
−
1.5
−
pF
MODE OF OPERATION
f
(MHz)
VDS
(V)
PL
(W)
Gp
(dB)
ηD
(%)
dim
(dBc)
CW, class-AB (2-tone)
f1 = 960; f2 = 960.1
26
45 (PEP)
>14
>35
≤−28
CW, class-AB (1-tone)
960
26
45
>14
>45
−



Html Pages

1 2 3 4 5 6 7 8


Datasheet Download

Go To PDF Page


Link URL



Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link to Datasheet    |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com