BLF145 datasheet(6/12 Pages) PHILIPS

6 / 12 page

September 1992

Philips Semiconductors

Product speciﬁcation

HF power MOS transistor

BLF145

APPLICATION INFORMATION FOR CLASS-A OPERATION

Th = 25 °C; Rth mb-h = 0.3 K/W; R1 = 26 Ω; unless otherwise speciﬁed.

RF performance in SSB operation in a common source class-A circuit.

Note

1. Stated figures are maximum values encountered at any driving level between the specified value of PEP and are

referred to the according level of either the equal amplified tones. Related to the according peak envelope power

these figures should be decreased by 6 dB.

MODE OF

OPERATION

(MHz)

VDS

(V)

(A)

(W)

(dB)

(note 1)

(dB)

(note 1)

(

Ω)

SSB, class-A

1.3

8 (PEP)

> 24

typ. 27

>−40

typ.

−43

<−40

typ.

−70

18.4

+ j5.2

Fig.9

Power gain as a function of load power,

typical values.

Class-A operation; VDS = 28 V; ID = 1.3 A;

Rth mb-h = 0.3 K/W; f = 28 MHz.

solid line: Th =25 °C.

dotted line: Th =70 °C.

handbook, halfpage

MGP040

(dB)

PL (W) PEP

Fig.10 Third order intermodulation distortion as a

function of load power, typical values.

Class-A operation; VDS = 28 V; ID = 1.3 A;

Rth mb-h = 0.3 K/W; f = 28 MHz.

solid line: Th =25 °C.

dotted line: Th =70 °C.

handbook, halfpage

010

−20

−30

−50

−60

−40

MGP041

(dB)

PL (W) PEP

BLF145 Datasheet(PDF) 6 Page - NXP Semiconductors

BLF145 Datasheet(HTML) 6 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL