PNP Silicon Epitaxial Planar Transistor

A92

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol

Test conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC=-100μA,IE=0

-300

V

Collector-emitter breakdown voltage V(BR)CEO

IC=-1.0mA,IB=0

-300

V

Emitter-base breakdown voltage

V(BR)EBO

IE=-100μA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-200V,IB=0

-0.25 μA

Emitter cut-off current

IEBO

VEB=-3V,IC=0

-0.1

μA

DC current gain

hFE

VCE=-10V,IC=-1mA

VCE=-10V,IC=-10mA

VCE=-10V,IC=-30mA

60

100

60

300

Collector-emitter saturation voltage

VCE(sat)

IC=-20mA, IB=-2mA

-0.5

V

Base-emitter saturation voltage

VBE(sat)

IC=-20mA, IB=-2mA

-0.9

V

Transition frequency

fT

VCE=-20V, IC=-10mA

f=100MHz

50

MHz

Collector output capacitance

Cob

VCB=-20V,IE=0,f=1MHz

6

pF

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

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