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BC560 Datasheet(PDF) 1 Page - List of Unclassifed Manufacturers |
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BC560 Datasheet(HTML) 1 Page - List of Unclassifed Manufacturers |
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1 / 2 page  PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T a=25°C unless otherwise noted Electrical Characteristics T a=25°C unless otherwise noted hFE Classification Symbol Parameter Value Units VCBO Collector-Base Voltage : BC556 : BC557/560 : BC558/559 -80 -50 -30 V V V VCEO Collector-Emitter Voltage : BC556 : BC557/560 : BC558/559 -65 -45 -30 V V V VEBO Emitter-Base Voltage -5 V IC Collector Current (DC) -100 mA PC Collector Power Dissipation 500 mW TJ Junction Temperature 150 °C TSTG Storage Temperature -65 ~ 150 °C Symbol Parameter Test Condition Min. Typ. Max. Units ICBO Collector Cut-off Current VCB= -30V, IE=0 -15 nA hFE DC Current Gain VCE= -5V, IC=2mA 110 800 VCE (sat) Collector-Emitter Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -90 -250 -300 -650 mV mV VBE (sat) Collector-Base Saturation Voltage IC= -10mA, IB= -0.5mA IC= -100mA, IB= -5mA -700 -900 mV mV VBE (on) Base-Emitter On Voltage VCE= -5V, IC= -2mA VCE= -5V, IC= -10mA -600 -660 -750 -800 mV mV fT Current Gain Bandwidth Product VCE= -5V, IC= -10mA, f=10MHz 150 MHz Cob Output Capacitance VCB= -10V, IE=0, f=1MHz 6 pF NF Noise Figure : BC556/557/558 : BC559/560 : BC559 : BC560 VCE= -5V, IC= -200µA f=1KHz, RG=2KΩ VCE= -5V, IC= -200µA RG=2KΩ, f=30~15000MHz 2 1 1.2 1.2 10 4 4 2 dB dB dB dB Classification A B C hFE 110 ~ 220 200 ~ 450 420 ~ 800 BC556/557/558/559/560 Switching and Amplifier • High Voltage: BC556, VCEO= -65V • Low Noise: BC559, BC560 • Complement to BC546 ... BC 550 http://www.luguang.cn Email:lge@luguang.cn TO-92 1. EMITTER 2. BASE 3. COLLECTOR |
Similar Part No. - BC560 |
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Similar Description - BC560 |
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