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TC25SPD Datasheet(PDF) 10 Page - Texas Instruments |
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TC25SPD Datasheet(HTML) 10 Page - Texas Instruments |
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10 / 19 page ![]() TC253SPD 680×500 PIXEL CCD IMAGE SENSOR SOCS062B – JANUARY 2001 – REVISED MAY 2002 10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 electrical characteristics over recommended ranges of supply voltage and operating free-air temperature (unless otherwise noted) PARAMETER MIN TYP† MAX UNIT Charge multiplication gain 1 30 (100)‡ Charge multiplication gain temperature coefficient %/ °C Excess noise factor for typical CCM gain (see Note 2) 1 1.2 1.4 Dynamic range without CCM gain 58 dB Dynamic range with typical CCM gain (see Note 3) 50 dB Charge conversion gain without CCM (see Note 4) 10 µV/e τ Signal-response delay time (see Note 5) 9 ns Output resistance 320 Ω Amplifier noise-equivalent signal without CCM gain § 42 e Amplifier noise-equivalent signal with typical CCM gain § 1.5 e Response linearity with no CCM gain 1 Response linearity with typical CCM gain 1 Charge-transfer efficiency (see Note 6) 0.9998 0.9999 Supply current 2 3 4 mA IAG-1 2.95 IAG-2 3.22 IAG-1–IAG2 1.98 nF SAG-1 3.04 nF SAG-2 3.62 C Inp t capacitance SAG-1–SAG2 2.22 Ci Input capacitance SRG-1 40 SRG-2 40 SRG-1–SRG2 pF CMG 30 pF CMG–SRG1 ODB 1,000 ADB high (see Note 7) 20 SRG-1, 2 high (see Note 7) 45 Pulse amplitude rejection ratio SRG-1, 2 low (see Note 7) 45 dB Pulse amplitude rejection ratio CMG high (see Note 7) 45 dB CMG low (see Note 7) 45 ODB low (see Note 7) 45 † All typical values are at TA = 25°C. ‡ Maximum CCM gain is not ensured. § The values in this table are quoted using correlated double sampling (CDS), which is a signal processing technique that improves performance by minimizing undesirable effects of reset noise. NOTES: 2. Excess noise factor F is defined as the ratio of noise sigma after multiplication divided by M times the noise sigma before multiplication where M is the charge multiplication gain. 3. Dynamic range is –20 times the logarithm of the mean noise sigma divided by the saturation output signal amplitude. 4. Charge conversion factor is defined as the ratio of output signal to input number of electrons. 5. Signal-response delay time is the time between the falling edge of the SRG2 pulse and the output signal valid state. 6. Charge transfer efficiency is 1 minus the charge loss per transfer in the CCD register. The test is performed in the dark using either electrical or optical input. 7. Rejection ratio is –20 times the logarithm of the output referenced to the reset level divided by the 1 V of amplitude change of the corresponding gate or terminal signal. |
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