Notes

a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.

b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum Junction-to-AmbientRthJA

-63

°C/W

Maximum Junction-to-Case (Drain)

RthJC

-0.6

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

VDS

VGS = 0 V, ID = 250 μA

6

00

-

-

V

VDS Temperature Coefficient

ΔVDS/TJ

Reference to 25 °C, ID = 1 mA

-0.65

-

V/°C

Gate-Source Threshold Voltage (N)

VGS(th)

VDS = VGS, ID = 250 μA

2

-

4

V

Gate-Source Leakage

IGSS

VGS = ± 20 V

-

-

± 100

nA

VGS = ± 30 V

-

-

± 1

μA

Zero Gate Voltage Drain Current

IDSS

VDS = 600 V, VGS = 0 V

-

-

1

μA

VDS = 520 V, VGS = 0 V, TJ = 125 °C

-

-

10

Drain-Source On-State Resistance

RDS(on)

VGS = 10 V

ID = 4 A

-

0.6

5

Ω

Forward Transconductance

gfs

VDS = 30 V, ID = 4 A

-

-S

Dynamic

Input Capacitance

Ciss

VGS = 0 V,

VDS = 100 V,

f = 1 MHz

-

-

pF

Output Capacitance

Coss

--

Reverse Transfer Capacitance

Crss

--

Effective Output Capacitance, Energy

Related a

Co(er)

VDS = 0 V to 520 V, VGS = 0 V

-

-

Effective Output Capacitance, Time

Related b

Co(tr)

-

-

Total Gate Charge

Qg

VGS = 10 V

ID = 4 A, VDS = 520 V

-

nC

Gate-Source Charge

Qgs

-

-

Gate-Drain Charge

Qgd

-

Turn-On Delay Time

td(on)

VDD = 520 V, ID = 4 A,

VGS = 10 V, Rg = 9.1

Ω

-

ns

Rise Time

tr

-

Turn-Off Delay Time

td(off)

-

Fall Time

tf

-

Gate Input Resistance

Rg

f = 1 MHz, open drain

-

3.5

-

Ω

Drain-Source Body Diode Characteristics

Continuous Source-Drain Diode Current

IS

MOSFET symbol

showing the

integral reverse

p - n junction diode

--

A

Pulsed Diode Forward Current

ISM

--

Diode Forward Voltage

VSD

TJ = 25 °C, IS = 4 A, VGS = 0 V

-

-

1.5

V

Reverse Recovery Time

trr

TJ = 25 °C, IF = IS = 4 A,

dI/dt = 100 A/μs, VR = 400 V

-

190

-

ns

Reverse Recovery Charge

Qrr

-

2.3

-

μC

Reverse Recovery Current

IRRM

-

-

A

S

D

G

-

12

-

45

62

25

2.0

2.7

-

-

-

-

25

55

70

40

7

18

10

www.VBsemi.com

VBM16R07 / VBMB16R07

VBE16R07 / VBFB16R07

服务热线：400-655-8788