BLF2047LSLASH90 datasheet(3/12 Pages) PHILIPS

3 / 12 page

1999 Dec 06

Philips Semiconductors

Product speciﬁcation

UHF power LDMOS transistor

BLF2047L

THERMAL CHARACTERISTICS

Note

1. Determined under specified RF operating conditions.

CHARACTERISTICS

Tj =25 °C unless otherwise speciﬁed.

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. Th =25 °C; Rth j-h = 1.15 K/W, unless otherwise speciﬁed.

Ruggedness in class-AB operation

The BLF2047L is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under

the following conditions: VDS = 26 V; IDQ = 350 mA; PL = 65 W; f = 2000 MHz.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-h

thermal resistance from junction to

heatsink

Th =25 °C, Ptot = 152 W, note 1

1.15

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V(BR)DSS

drain-source breakdown voltage

VGS = 0; ID = 1.4 mA

−−

VGSth

gate-source threshold voltage

VDS = 10 V; ID = 140 mA

1.5

−

3.5

IDSS

drain-source leakage current

VGS = 0; VDS =26V

−−

µA

IDSX

on-state drain current

VGS =VGS th +9V; VDS =10V

−−

IGSS

gate leakage current

VGS = ±15 V; VDS =0

−−

250

gfs

forward transconductance

VDS = 10 V; ID =5A

−

RDSon

drain-source on-state resistance

VGS =VGS th +9V; ID =5A

−

0.17

−Ω

Crss

feedback capacitance

VGS = 0; VDS = 26 V; f = 1 MHz

−

3.4

−

MODE OF OPERATION

(MHz)

VDS

(V)

IDQ

(mA)

(W)

(dB)

ηD

(%)

dim

(dBc)

Two-tone, class-AB

f1 = 2000; f2 = 2000.1

350

65 (PEP)

>10.5

>30

≤−25

BLF2047L/90 Datasheet(PDF) 3 Page - NXP Semiconductors

BLF2047L/90 Datasheet(HTML) 3 Page - NXP Semiconductors

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12

Datasheet Download

Link URL