Wuxi NCE Power Co., Ltd

Page

V2.0

2

NCE6003XM

http://www.ncepower.com

Gate-Body Leakage Current

IGSS

VGS=±20V,VDS=0V

-

-

±100

nA

On Characteristics (Note 3)

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=250μA

0.9

1.3

2.0

V

Drain-Source On-State Resistance

RDS(ON)

VGS=10V, ID=3A

-

68

78

mΩ

VGS=4.5V, ID=3A

-

80

96

mΩ

Forward Transconductance

gFS

VDS=5V,ID=3A

-

3

-

S

Dynamic Characteristics (Note4)

Input Capacitance

Clss

VDS=30V,VGS=0V,

F=1.0MHz

-

270

-

PF

Output Capacitance

Coss

-

30

-

PF

Reverse Transfer Capacitance

Crss

-

21

-

PF

Switching Characteristics (Note 4)

Turn-on Delay Time

td(on)

VDD=30V,ID=3A

VGS=10V,RGEN=1Ω

-

5

-

nS

Turn-on Rise Time

tr

-

10

-

nS

Turn-Off Delay Time

td(off)

-

12

-

nS

Turn-Off Fall Time

tf

-

8

-

nS

Total Gate Charge

Qg

VDS=30V,ID=3A,

VGS=10V

-

11.5

-

nC

Gate-Source Charge

Qgs

-

1.8

-

nC

Gate-Drain Charge

Qgd

-

2.2

-

nC

Drain-Source Diode Characteristics

Diode Forward Voltage (Note 3)

VSD

VGS=0V,IS=3A

-

-

1.2

V

Diode Forward Current (Note 2)

IS

-

-

3

A

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production