NCE6005AS datasheet(1/7 Pages) NCEPOWER

Part #	NCE6005AS

Description	NCE N-Channel Enhancement Mode Power MOSFET

PDF	7 Pages

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Manufacturer	NCEPOWER [Wuxi NCE Power Semiconductor Co., Ltd]

Direct Link	http://www.ncepower.com

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Wuxi NCE Power Co., Ltd

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V6.0

1

NCE6005AS

http://www.ncepower.com

NCE N-Channel Enhancement Mode Power MOSFET

Description

The NCE6005AS uses advanced trench technology and

design to provide excellent RDS(ON) with low gate charge. It

can be used in a wide variety of applications.

General Features

●

VDS=60V,ID=5A

RDS(ON) <30mΩ @ VGS=10V (Typ.26mΩ)

RDS(ON) <38mΩ @ VGS=4.5V (Typ.32mΩ)

●

High density cell design for ultra low Rdson

●

Fully characterized avalanche voltage and current

●

Good stability and uniformity with high EAS

●

Excellent package for good heat dissipation

Application

●

Power switching application

●

Hard switched and high frequency circuits

●

Uninterruptible power supply

Schematic diagram

Marking and pin assignment

SOP-8 top view

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

NCE6005AS

SOP-8

Ø330mm

12mm

4000 units

Absolute Maximum Ratings (TA=25℃unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

60

V

Gate-Source Voltage

VGS

±20

V

Drain Current-Continuous

ID

5

A

Drain Current-Continuous(TC=100℃)

ID (100℃)

3.5

A

Pulsed Drain Current

IDM

24

A

Maximum Power Dissipation

PD

2

W

Single pulse avalanche energy (Note 5)

EAS

65

mJ

Operating Junction and Storage Temperature Range

TJ,TSTG

-55 To 150

℃

Thermal Characteristic

Thermal Resistance,Junction-to-A

mbient (Note 2)

RθJA

62.5

℃

/W

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NCE6005AS Datasheet(PDF) 1 Page - Wuxi NCE Power Semiconductor Co., Ltd

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