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H7N1004LS Datasheet(PDF) 2 Page - Renesas Technology Corp |
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H7N1004LS Datasheet(HTML) 2 Page - Renesas Technology Corp |
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2 / 12 page ![]() H7N1004LD, H7N1004LS, H7N1004LM Rev.6.00, Aug.27.2003, page 2 of 11 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Value Unit Drain to source voltage VDSS 100 V Gate to source voltage VGSS ±20 V Drain current ID 30 A Drain peak current ID (pulse) Note1 100 A Body-drain diode reverse drain current IDR 30 A Avalanche current IAP Note 3 15 A Avalanche energy EAR Note 3 22.5 mJ Channel dissipation Pch* Note 2 50 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25 °C 3. Value at Tch = 25 °C, Rg ≥ 50 Ω |
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