BLF246B datasheet(6/16 Pages) PHILIPS

6 / 16 page

2000 Feb 04

Philips Semiconductors

Product speciﬁcation

VHF push-pull power MOS transistor

BLF246B

APPLICATION INFORMATION

RF performance in CW operation in a push-pull, common source, class-B circuit. Th =25 °C; Rth mb-h = 0.25 K/W;

unless otherwise speciﬁed.

Ruggedness in class-B operation

The BLF246B is capable of withstanding a load mismatch corresponding to VSWR = 50 : 1 through all phases under the

following conditions: VDS = 28 V; f = 175 MHz at rated output power.

MODE OF OPERATION

(MHz)

VDS

(V)

IDQ

(mA)

(W)

(dB)

(%)

CW, class-B

175

× 50

>14

>55

typ. 19

typ. 65

Fig.9

Power gain and efficiency as a function of

load power; typical values per section.

Class-B operation; VDS = 28 V; IDQ =2 × 50 mA;

ZL = 4.6 + j5 Ω; f = 175 MHz.

handbook, halfpage

020

MGR744

100

(dB)

PL (W)

(%)

Fig.10 Load power as a function of input power;

typical values per section.

Class-B operation; VDS = 28 V; IDQ =2 × 50 mA;

ZL = 4.6 + j5 Ω; f = 175 MHz.

handbook, halfpage

2.5

100

MGR745

0.5

1.0

1.5

2.0

PIN (W)

(W)

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