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BLF521 Datasheet(PDF) 5 Page - NXP Semiconductors |
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BLF521 Datasheet(HTML) 5 Page - NXP Semiconductors |
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5 / 14 page ![]() November 1992 5 Philips Semiconductors Product specification UHF power MOS transistor BLF521 Fig.6 Drain-source on-state resistance as a function of junction temperature, typical values. ID = 0.3 A; VGS =15V. handbook, halfpage 040 80 RDSon ( Ω) Tj (°C) 160 5 0 4 120 3 2 1 MDA483 Fig.7 Input and output capacitance as functions of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 0 30 20 10 0 4 Cos Cis VDS (V) C (pF) 816 12 MDA482 Fig.8 Feedback capacitance as a function of drain-source voltage, typical values. VGS = 0; f = 1 MHz. handbook, halfpage 04 8 Crs (pF) VDS (V) 16 5 0 4 12 3 2 1 MDA481 |
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