BLF861 datasheet(4/12 Pages) PHILIPS

4 / 12 page

1999 Aug 26

Philips Semiconductors

Preliminary specification

UHF power LDMOS transistor

BLF861

APPLICATION INFORMATION

RF performance in a common source class-AB circuit. Th =25

°C; Rth mb-h = 0.15 K/W, unless otherwise specified.

Notes

Sync compression: input sync:

≥33%; output sync: 27 %

measured in narrowband testcircuit.

Ruggedness in class-AB operation

The BLF861 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the

following conditions: VDS = 32 V; f = 860 MHz at rated load power.

MODE OF

OPERATION

(MHz)

VDS

(V)

IDQ

(A)

(W)

(dB)

ηD

(%)

dIM

(dBc)

∆Gp

(dB)

CW, class-AB

860

1.15

150

>14

>50

−≤1

2-tone, class-AB

f1 = 860

f1 = 860.1

1.15

150 (PEP)

>14

>40

≤−30

−

PAL BG (TV), class-AB

860

(ch 69)

1.15

typ.170

(peak sync)

>14

>40

−

note 1

Fig.3

Input impedance as a function of frequency

(series components); typical values per

section.

CW, class-AB operation; VDS =32 V; IDQ =1.15 A;

PL = 170 W (total device) ; Th =25

°C.

400

500

600

700

800

900

f (MHz)

(

Ω)

Fig.4

Load impedance as a function of frequency

(series components); typical values per

section.

CW, class-AB operation; VDS =32 V; IDQ =1.15 A;

PL = 170 W (total device) ; Th =25

°C.

-6

-4

-2

400

500

600

700

800

900

f (MHz)

(

Ω)

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