VBM1102M datasheet(1/7 Pages) VBSEMI

Part #	VBM1102M

Description	N-Channel 100-V (D-S) MOSFET

PDF	7 Pages

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Manufacturer	VBSEMI [VBsemi Electronics Co.,Ltd]

Direct Link	www.VBsemi.com

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N-Channel 100-V (D-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

•

175 °C Junction Temperature

•

Low Thermal Resistance Package

•

100 % Rg Tested

APPLICATIONS

•

Isolated DC/DC Converters

PRODUCT SUMMARY

V(BR)DSS (V)

RDS(on) (Ω)ID (A)

100

0.

180 at V

GS = 10 V

16

N-Channel MOSFET

G

D

S

Notes:

a. Package limited.

b. Duty cycle

≤ 1 %.

c. See SOA curve for voltage derating.

d. When Mounted on 1" square PCB (FR-4 material).

ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

100

V

Gate-Source Voltage

VGS

± 20

Continuous Drain Current (TJ = 175 °C)

TC = 25 °C

ID

16

A

TC = 125 °C

14

Pulsed Drain Current

IDM

60

Avalanche Current

L = 0.1 mH

IAS

10

Single Pulse Avalanche Energyb

EAS

200

mJ

Maximum Power Dissipationb

TC = 25 °C

PD

W

TA = 25 °C

d

3.55

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 175

°C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Limit

Unit

Junction-to-Ambient

PCB Mount (TO-263)d

RthJA

40

°C/W

Junction-to-Case (Drain)

RthJC

0.4

RoHS

COMPLIANT

VBM110

2M

www.VBsemi.com

TO-220AB

Top View

GD S

1

95

服务热线：400-655-8788

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