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SILICON TRANSISTOR

GA4xxx

RESISTOR BUILT-IN TYPE NPN TRANSISTOR

DATA SHEET

Document No. D16494EJ3V0DS00 (3rd edition)

Date Published December 2005 NS CP(K)

Printed in Japan

2002

The mark <R> shows major revised points.

The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.

FEATURES

• Compact package

• Resistors built-in type

• Complementary to GN4xxx

ORDERING INFORMATION

PART NUMBER

PACKAGE

GA4xxx

SC-70

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to Base Voltage

VCBO

60

V

Collector to Emitter Voltage

VCEO

50

V

Emitter to Base Voltage

VEBO

Note1

V

Collector Current (DC)

IC

0.1

A

Collector Current (pulse)

Note2

IC(pulse)

0.2

A

Total Power Dissipation

PT

0.15

W

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–55 to +150

°C

Note 1.

PART NUMBER

VEBO

(V)

MARK

R1

(k

Ω)

R2

(k

Ω)

PART NUMBER

VEBO

(V)

MARK

R1

(k

Ω)

R2

(k

Ω)

GA4A4M

10

AA1

10.0

10.0

GA4L4L

15

AK1

47.0

22.0

GA4F4M

10

AB1

22.0

22.0

GA4A4Z

5

AL1

10.0

GA4L4M

10

AC1

47.0

47.0

GA4F4Z

5

AM1

22.0

GA4L3M

10

AD1

4.7

4.7

GA4L4Z

5

AN1

47.0

GA4L3N

5

AE1

4.7

10.0

GA4F3M

10

AP1

2.2

2.2

GA4L3Z

5

AF1

4.7

GA4F3P

5

AQ1

2.2

10.0

GA4A3Q

5

AG1

1.0

10.0

GA4F3R

5

AR1

2.2

47.0

GA4A4P

5

AH1

10.0

47.0

GA4A4L

15

AS1

10.0

4.7

GA4F4N

5

AJ1

22.0

47.0

GA4L4K

25

AT1

47.0

10.0

Note 2. PW

≤ 10 ms, Duty Cycle ≤ 50%

PACKAGE DRAWING (Unit: mm)

3

21

2.0

± 0.2

0.65

0.3 +

0.1

−0

0.65

0.3 +

0.1

−0

0.3

0.9

± 0.1

0.15 +

0.1

−0.05

0 to 0.1

Marking

EQUIVALENT CIRCUIT

2

R1

R2

1

3

PIN CONNECTION

1: Emitter

2: Base

3: Collector

<R>

<R>

<R>