August 1986

2

Philips Semiconductors

Product specification

VHF power transistor

BLV10

DESCRIPTION

N-P-N silicon planar epitaxial

transistor intended for use in class-A,

B and C operated mobile, h.f. and

v.h.f. transmitters with a nominal

supply voltage of 13,5 V. The

transistor is resistance stabilized and

is guaranteed to withstand severe

load mismatch conditions with a

supply over-voltage to 16,5 V.

It has a 3/8” flange envelope with a

ceramic cap. All leads are isolated

from the flange.

QUICK REFERENCE DATA

MODE OF OPERATION

V

f

MHz

W

dB

η

%

Ω

mS

c.w.

13,5

175

8

>

9,0

>

70

2,8

+ j1,2

76

− j16

c.w.

12,5

175

8

typ. 10,5

typ. 75

−−

PIN CONFIGURATION

Fig.1 Simplified outline, SOT123.

handbook, halfpage

1

23

4

MSB057

PINNING

PIN

DESCRIPTION

1

collector

2

emitter

3

base

4

emitter

PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely

safe provided that the BeO disc is not damaged.