1997 Nov 10

2

Philips Semiconductors

Preliminary specification

UHF push-pull power transistor

BLV897

FEATURES

• Internal input matching for an optimum wideband

capability and high gain

• Polysilicon emitter ballasting resistors for an optimum

temperature profile

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Common emitter class-AB operation in base stations in

the 800 to 960 MHz frequency band.

DESCRIPTION

NPN silicon planar transistor with two sections in push-pull

configuration. The device is encapsulated in a SOT324B

4-lead rectangular flange package with a ceramic cap.

The common emitters are connected to the flange.

PINNING - SOT324B

PIN

SYMBOL

DESCRIPTION

1

c1

collector 1

2

c2

collector 2

3

b1

base 1

4

b2

base 2

5

e

common emitters connected to

flange

handbook, halfpage

12

5

3

4

MAM217

Top view

c1

b1

b2

c2

e

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

MODE OF

OPERATION

f

(MHz)

(V)

(mA)

(W)

(dB)

(%)

(dBc)

CW, class-AB

900

24

2

× 80

30

≥10

≥45

−

2-tone, class-AB

900

24

2

× 80

30 (PEP)

≥11

≥35

<

−32; typ. −37

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.