1995 Jun 29

2

Philips Semiconductors

Product specification

UHF power transistor

BLV935

FEATURES

• Emitter ballasting resistors for an optimum temperature

profile

• Gold metallization ensures excellent reliability

• Internal input matching to achieve high power gain and

easy design of wideband circuits.

APPLICATIONS

• Base stations in the 820 to 980 MHz range.

DESCRIPTION

NPN silicon planar epitaxial transistor intended for

common emitter class-AB operation. The transistor has

internal input matching by means of MOS capacitors and

is encapsulated in a 6-lead SOT273 flange envelope with

a ceramic cap. All leads are isolated from the flange.

PINNING - SOT273

PIN

SYMBOL

DESCRIPTION

1

e

emitter

2

e

emitter

3

c

collector

4

b

base

5

e

emitter

6

e

emitter

Fig.1 Simplified outline and symbol.

handbook, halfpage

1

3

5

2

4

6

Top view

e

c

b

MAM033

QUICK REFERENCE DATA

MODE OF OPERATION

f

(MHz)

(V)

(W)

(dB)

(%)

CW, class-AB

960

26

30

≥ 9

≥ 55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.