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IRF630B Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

Part # IRF630B
Description  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Manufacturer  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF630B Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRF630B
DESCRIPTION
·
Drain Current –ID=9A@ TC=25℃
·
Drain Source Voltage-
: VDSS= 200V(Min)
·
Static Drain-Source On-Resistance
: RDS(on) = 0.4Ω(Max)
·
Fast Switching Speed
·
Low Drive Requirement
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
This device is n-channel, enhancement mode, power MOSFET
designed especially for high power, high speed applications,
such as switching power supplies,UPS, AC and DC motor con-
trols, relay and solenoid drivers and high energy pulse circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
200
V
VGS
Gate-Source Voltage
±
30
V
ID
Drain Current-continuous@ TC=25℃
9
A
Ptot
Total Dissipation@TC=25℃
72
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.74
℃
/W
Rth j-a
Thermal Resistance,Junction to Ambient
62.5
℃
/W


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